Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	2SA1162
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	PNP
Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Power - Max	150mW
Frequency - Transition	80MHz
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini
Base Part Number	2SA1162

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2SB1709TL	Rohm Semiconductor, Bipolar (BJT) Transistor PNP 12V 1.5A 400MHz 500mW Surface Mount TSMT3,	View
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NJVMJD45H11G	ON Semiconductor, Bipolar (BJT) Transistor PNP 50V 8A 90MHz 1.75W Surface Mount DPAK,	View
BC857BE6327HTSA1	Infineon Technologies, Bipolar (BJT) Transistor PNP 45V 100mA 250MHz 330mW Surface Mount SOT-23-3,	View
PBSS3540M,315	Nexperia USA Inc., Bipolar (BJT) Transistor PNP 40V 500mA 300MHz 430mW Surface Mount DFN1006-3,	View
FMMT591QTA	Diodes Incorporated, Bipolar (BJT) Transistor PNP 60V 1A 150MHz 500mW Surface Mount SOT-23,	View
DZT751-13	Diodes Incorporated, Bipolar (BJT) Transistor PNP 60V 3A 145MHz 1W Surface Mount SOT-223,	View

2SA1162-GR,LF

Part Number2SA1162-GR,LF