2N7000BU_T

Part Number2N7000BU_T

ManufacturerON Semiconductor

To learn about the specification of 2N7000BU_T, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add 2N7000BU_T with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of 2N7000BU_T.
We are offering 2N7000BU_T for competitive price in the global market, please send us a quota request for pricing. Thank you!

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
FET Feature	-
Power Dissipation (Max)	400mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Base Part Number	2N7000