2N6384
2N6384
Part Number 2N6384 Description TRANS NPN DARL 60V 10A TO-3 Package / Case TO-204AA, TO-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN - Darlington 60V 10A 100W Through Hole TO-3
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2N6384 - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N6383 thru 2N6385 Standard Package 20 Manufacturer Central Semiconductor Corp Series - Packaging Tube Part Status Active Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A, 3V Power - Max 100W Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-204AA, TO-3 Supplier Device Package TO-3
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MMBT5551M3T5G ON Semiconductor, Bipolar (BJT) Transistor NPN 160V 60mA 265mW Surface Mount SOT-723,
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TIP120TU ON Semiconductor, Bipolar (BJT) Transistor NPN - Darlington 60V 5A 2W Through Hole TO-220-3,
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PBSS8110D,115 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 100V 1A 100MHz 700mW Surface Mount 6-TSOP,
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2SC5200N(S1,E,S) Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor NPN 230V 15A 30MHz 150W Through Hole TO-3P(N),
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SMMBT2369ALT1G ON Semiconductor, Bipolar (BJT) Transistor NPN 15V 200mA 225mW Surface Mount SOT-23-3 (TO-236),
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PBSS303NX,115 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 30V 5.1A 130MHz 2.1W Surface Mount SOT-89,
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BCX6825TA Diodes Incorporated, Bipolar (BJT) Transistor NPN 20V 1A 100MHz 1W Surface Mount SOT-89-3,
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ZTX849 Diodes Incorporated, Bipolar (BJT) Transistor NPN 30V 5A 100MHz 1.2W Through Hole E-Line (TO-92 compatible),
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DSC7101R0L Panasonic Electronic Components, Bipolar (BJT) Transistor NPN 80V 500mA 150MHz 1W Surface Mount MiniP3-F2-B,
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2SD1782KT146Q Rohm Semiconductor, Bipolar (BJT) Transistor NPN 80V 500mA 120MHz 200mW Surface Mount SMT3,
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