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2N5551TA

2N5551TA

Part Number2N5551TA

ManufacturerON Semiconductor

DescriptionTRANS NPN 160V 0.6A TO-92

Datasheet2N5551 - MMBT5551

Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3

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2N5551TA - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	2N5551 - MMBT5551
Standard Package	2000
Manufacturer	ON Semiconductor
Series	-
Packaging	Tape & Box (TB)
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	600mA
Voltage - Collector Emitter Breakdown (Max)	160V
Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Power - Max	625mW
Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package	TO-92-3
Base Part Number	2N5551

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