2N5551TA
2N5551TA
Part Number 2N5551TA Description TRANS NPN 160V 0.6A TO-92 Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3
To learn about the specification of 2N5551TA, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add 2N5551TA with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of 2N5551TA.
We are offering 2N5551TA for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
2N5551TA - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N5551 - MMBT5551 Standard Package 1 Manufacturer ON Semiconductor Series - Packaging Cut Tape (CT) Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Power - Max 625mW Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 Base Part Number 2N5551
BD13916STU ON Semiconductor, Bipolar (BJT) Transistor NPN 80V 1.5A 1.25W Through Hole TO-126-3,
View
BC847AMB,315 Nexperia USA Inc., Bipolar (BJT) Transistor Surface Mount DFN1006B-3,
View
2SC3324GRTE85LF Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor NPN 120V 100mA 100MHz 150mW Surface Mount TO-236,
View
PZT2222A-TP Micro Commercial Co, Bipolar (BJT) Transistor NPN 40V 300MHz 1W Surface Mount SOT-223,
View
PBHV8118T,215 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 180V 1A 30MHz 300mW Surface Mount TO-236AB,
View
FMMT493TA Diodes Incorporated, Bipolar (BJT) Transistor NPN 100V 1A 150MHz 500mW Surface Mount SOT-23-3,
View
2SC4116-BL,LF Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 100mW Surface Mount USM,
View
ZTX451 Diodes Incorporated, Bipolar (BJT) Transistor NPN 60V 1A 150MHz 1W Through Hole E-Line (TO-92 compatible),
View
NJVNJD35N04T4G ON Semiconductor, Bipolar (BJT) Transistor NPN - Darlington 350V 4A 90MHz 45W Surface Mount DPAK,
View
SMMBTA42LT1G ON Semiconductor, Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 225mW Surface Mount SOT-23-3 (TO-236),
View
BC817-16W-7 Diodes Incorporated, Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 200mW Surface Mount SOT-323,
View
2SD1816S-E ON Semiconductor, Bipolar (BJT) Transistor NPN 100V 4A 180MHz 1W Through Hole TP,
View
2N5551TA - Tags
English
