2N5551BU
2N5551BU
Part Number 2N5551BU Description TRANS NPN 160V 0.6A TO-92 Package / Case TO-226-3, TO-92-3 (TO-226AA)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625mW Through Hole TO-92-3
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2N5551BU - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N5551 - MMBT5551 Standard Package 10000 Manufacturer ON Semiconductor Series - Packaging Bulk Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Power - Max 625mW Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 Base Part Number 2N5551
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CMPTA44 TR Central Semiconductor Corp, Bipolar (BJT) Transistor NPN 400V 300mA 20MHz 350mW Surface Mount SOT-23,
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TIP121 STMicroelectronics, Bipolar (BJT) Transistor NPN - Darlington 80V 5A 2W Through Hole TO-220AB,
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