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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N3906, (MMBT,PZT)3906 Datasheet
Standard Package 2000
Manufacturer ON Semiconductor
Series -
Packaging Tape & Reel (TR)
Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Power - Max 625mW
Frequency - Transition 250MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Base Part Number 2N3906
BC858B,215
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Panasonic Electronic Components, Bipolar (BJT) Transistor PNP 50V 100mA 150MHz 125mW Surface Mount SSMini3-F3-B,
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Diodes Incorporated, Bipolar (BJT) Transistor PNP 500V 150mA 60MHz 500mW Surface Mount SOT-23,
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ON Semiconductor, Bipolar (BJT) Transistor PNP 300V 500mA 50MHz 150mW Surface Mount SC-70-3 (SOT323),
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Rohm Semiconductor, Bipolar (BJT) Transistor PNP 80V 1.5A 340MHz 500mW Surface Mount MPT3,
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Nexperia USA Inc., Bipolar (BJT) Transistor PNP 600V 500mA 38MHz 650mW Surface Mount SC-73,
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ON Semiconductor, Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 200mW Surface Mount SC-75, SOT-416,
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