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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N3906, (MMBT,PZT)3906 Datasheet
Standard Package 2000
Manufacturer ON Semiconductor
Series -
Packaging Tape & Box (TB)
Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Power - Max 625mW
Frequency - Transition 250MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Base Part Number 2N3906
BCW69,215
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Nexperia USA Inc., Bipolar (BJT) Transistor PNP 45V 100mA 70MHz 250mW Surface Mount TO-236AB, Automotive, AEC-Q101
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Diodes Incorporated, Bipolar (BJT) Transistor PNP 45V 800mA 100MHz 330mW Surface Mount SOT-23-3,
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ON Semiconductor, Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 150mW Surface Mount SC-70-3 (SOT323),
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Comchip Technology, Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 250mW Surface Mount SOT-23,
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Diodes Incorporated, Bipolar (BJT) Transistor PNP 15V 3A 100MHz 2W Surface Mount SOT-223,
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