2N3637UB


2N3637UB

Part Number2N3637UB

Manufacturer

Description

Datasheet

Package / Case3-SMD, No Lead

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2N3637UB - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingTray
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)175V
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 50mA
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA, 10V
Power - Max1.5W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeSurface Mount
Package / Case3-SMD, No Lead
Supplier Device PackageUB

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2N3637UB - Tags

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