2N3250
2N3250
Part Number 2N3250
Description TRANS PNP 40V 0.2A TO-18
Package / Case TO-206AA, TO-18-3 Metal Can
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Detailed Description Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 360mW Through Hole TO-18
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2N3250 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N3250(A),2N3251(A)
Standard Package 2000
Manufacturer Central Semiconductor Corp
Series -
Packaging Bulk
Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 1V
Power - Max 360mW
Frequency - Transition 250MHz
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18
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Diodes Incorporated, Bipolar (BJT) Transistor PNP 20V 2.5A 180MHz 2W Surface Mount SOT-89-3,
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ON Semiconductor, Bipolar (BJT) Transistor PNP 400V 300mA 625mW Through Hole TO-92-3,
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Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor PNP 230V 15A 30MHz 150W Through Hole TO-3P(N),
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2N3250 - Tags