2N2907A
2N2907A
Part Number 2N2907A Description TRANS PNP 60V 0.6A TO-18 Package / Case TO-206AA, TO-18-3 Metal CanUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 400mW Through Hole TO-18
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2N2907A - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N2906(A),2N2907(A) Standard Package 2000 Manufacturer Central Semiconductor Corp Series - Packaging Bulk Part Status Active Transistor Type PNP Current - Collector (Ic) (Max) 600mA Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max) 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V Power - Max 400mW Frequency - Transition 200MHz Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-206AA, TO-18-3 Metal Can Supplier Device Package TO-18
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MJE2955T STMicroelectronics, Bipolar (BJT) Transistor PNP 60V 10A 2MHz 75W Through Hole TO-220AB,
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BCX42E6327HTSA1 Infineon Technologies, Bipolar (BJT) Transistor PNP 125V 800mA 150MHz 330mW Surface Mount SOT-23-3,
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PN4250A Central Semiconductor Corp, Bipolar (BJT) Transistor PNP 60V 500mA 625mW Through Hole TO-92,
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