2N1131

Part Number2N1131

ManufacturerCentral Semiconductor Corp

DescriptionTHROUGH-HOLE TRANSISTOR-SMALL SI

Datasheet2N1131

Package / CaseTO-205AD, TO-39-3 Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor PNP 50V 600mA 50MHz 2W Through Hole TO-39

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2N1131 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

2N1131

Standard Package

500

Manufacturer

Central Semiconductor Corp

Series

Packaging

Bulk

Part Status

Active

Transistor Type

PNP

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 15mA, 150mA

Current - Collector Cutoff (Max)

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 150mA, 10V

Power - Max

Frequency - Transition

50MHz

Operating Temperature

-65°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-205AD, TO-39-3 Metal Can

Supplier Device Package

TO-39

All categories

2N1131

Part Number2N1131

ManufacturerCentral Semiconductor Corp

DescriptionTHROUGH-HOLE TRANSISTOR-SMALL SI

Datasheet2N1131

Package / CaseTO-205AD, TO-39-3 Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor PNP 50V 600mA 50MHz 2W Through Hole TO-39

2N1131 - Product Attributes

2N1131 - Tags