1N5809US
1N5809US
Part Number 1N5809US Description DIODE GEN PURP 100V 3A B-MELF Package / Case SQ-MELF, BUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Diode Standard 100V 3A Surface Mount B, SQ-MELF
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1N5809US - Product Attributes
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Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet 1N5807,09,11 US/URS Standard Package 1 Manufacturer Microsemi Corporation Series - Packaging Bulk Part Status Active Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 875mV @ 4A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 30ns Current - Reverse Leakage @ Vr 5µA @ 100V Capacitance @ Vr, F 60pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case SQ-MELF, B Supplier Device Package B, SQ-MELF Operating Temperature - Junction -65°C ~ 175°C
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