1N5618US
1N5618US
Part Number 1N5618US Description DIODE GEN PURP 600V 1A D5A Package / Case SQ-MELF, AUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Diode Standard 600V 1A Surface Mount D-5A
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1N5618US - Product Attributes
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Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet 1N5614US thru 1N5622US Standard Package 1 Manufacturer Microsemi Corporation Series - Packaging Bulk Part Status Active Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.3V @ 3A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 2µs Current - Reverse Leakage @ Vr 500nA @ 600V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case SQ-MELF, A Supplier Device Package D-5A Operating Temperature - Junction -65°C ~ 200°C
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UF4003-E3/73 Vishay Semiconductor Diodes Division, Diode Standard 200V 1A Through Hole DO-204AL (DO-41),
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1N4148 A0G Taiwan Semiconductor Corporation, Diode Standard 100V 150mA Through Hole DO-35,
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CMOD4448 TR Central Semiconductor Corp, Diode Standard 75V 250mA Surface Mount SOD-523,
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