1N5615US
1N5615US
Part Number 1N5615US Description DIODE GEN PURP 200V 1A D5A Package / Case SQ-MELF, AUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Diode Standard 200V 1A Surface Mount D-5A
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1N5615US - Product Attributes
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Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet 1N5615US thru 1N5623US Standard Package 1 Manufacturer Microsemi Corporation Series - Packaging Bulk Part Status Active Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.6V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 150ns Current - Reverse Leakage @ Vr 500nA @ 200V Capacitance @ Vr, F 45pF @ 12V, 1MHz Mounting Type Surface Mount Package / Case SQ-MELF, A Supplier Device Package D-5A Operating Temperature - Junction -65°C ~ 175°C
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STTH3010GY-TR STMicroelectronics, Diode Standard 1000V 30A Surface Mount D²PAK, Automotive, AEC-Q101
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S3G-TP Micro Commercial Co, Diode Standard 400V 3A Surface Mount DO-214AB (SMC),
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SF36G A0G Taiwan Semiconductor Corporation, Diode Standard 400V 3A Through Hole DO-201AD,
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BAS116LT3G ON Semiconductor, Diode Standard 75V 200mA (DC) Surface Mount SOT-23-3 (TO-236),
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1N485B ON Semiconductor, Diode Standard 200V 200mA Through Hole DO-35,
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IDW75E60FKSA1 Infineon Technologies, Diode Standard 600V 120A (DC) Through Hole PG-TO247-3,
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1N5615US - Tags
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