1N5615
1N5615
Part Number 1N5615 Description DIODE GEN PURP 200V 1A AXIAL Package / Case A, AxialUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Diode Standard 200V 1A Through Hole
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1N5615 - Product Attributes
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Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet 1N5615 - 1N5623 Standard Package 1 Manufacturer Microsemi Corporation Series - Packaging Bulk Part Status Active Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.6V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 150ns Current - Reverse Leakage @ Vr 500nA @ 200V Capacitance @ Vr, F 45pF @ 12V, 1MHz Mounting Type Through Hole Package / Case A, Axial Operating Temperature - Junction -65°C ~ 175°C
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ES1DHE3_A/H Vishay Semiconductor Diodes Division, Diode Standard 200V 1A Surface Mount DO-214AC (SMA), Automotive, AEC-Q101
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US1B-TP Micro Commercial Co, Diode Standard 100V 1A Surface Mount DO-214AC (SMA),
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ESH2PD-M3/84A Vishay Semiconductor Diodes Division, Diode Standard 200V 2A Surface Mount DO-220AA (SMP), eSMP®
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ES1AL RVG Taiwan Semiconductor Corporation, Diode Standard 50V 1A Surface Mount Sub SMA,
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BAS116HMFHT116 Rohm Semiconductor, Diode Standard 80V 215mA (DC) Surface Mount SSD3, Automotive, AEC-Q101
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APTDF500U20G Microsemi Corporation, Diode Standard 200V 500A Chassis Mount LP4,
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1N1190A GeneSiC Semiconductor, Diode Standard 600V 40A Chassis, Stud Mount DO-5,
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STTH1R04A STMicroelectronics, Diode Standard 400V 1A Surface Mount SMA,
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1N5615 - Tags
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