1N5553US
1N5553US
Part Number 1N5553US Description DIODE GEN PURP 800V 3A B-MELF Package / Case SQ-MELF, BUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Diode Standard 800V 3A Surface Mount B, SQ-MELF
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1N5553US - Product Attributes
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Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet 1N5550US thru 1N5554US Standard Package 1 Manufacturer Microsemi Corporation Series - Packaging Bulk Part Status Active Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 1.2V @ 9A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 2µs Current - Reverse Leakage @ Vr 1µA @ 800V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case SQ-MELF, B Supplier Device Package B, SQ-MELF Operating Temperature - Junction -65°C ~ 175°C
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FES16JT-E3/45 Vishay Semiconductor Diodes Division, Diode Standard 600V 16A Through Hole TO-220AC,
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1N4934G-T Diodes Incorporated, Diode Standard 100V 1A Through Hole DO-41,
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