1517-110M


1517-110M

Part Number1517-110M

Manufacturer

Description

Datasheet

Package / Case55AW-1

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

1517-110M - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingBulk
Part StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)70V
Frequency - Transition1.48GHz ~ 1.65GHz
Noise Figure (dB Typ @ f)-
Gain7.3dB ~ 8.6dB
Power - Max350W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 1A, 5V
Current - Collector (Ic) (Max)9A
Operating Temperature-
Mounting TypeChassis Mount
Package / Case55AW-1
Supplier Device Package55AW-1

1517-110M - Tags

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