1214-32L


1214-32L

Part Number1214-32L

Manufacturer

Description

Datasheet

Package / Case55AW-1

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

1214-32L - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingBulk
Part StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)50V
Frequency - Transition1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f)-
Gain7.8dB ~ 8.9dB
Power - Max125W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 1A, 5V
Current - Collector (Ic) (Max)5A
Operating Temperature200°C (TJ)
Mounting TypeChassis Mount
Package / Case55AW-1
Supplier Device Package55AW-1

1214-32L - Tags

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