1214-110M


1214-110M

Part Number1214-110M

Manufacturer

Description

Datasheet

Package / Case55KT

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Lead TimeTo be Confirmed

Detailed Description

1214-110M - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingBulk
Part StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)75V
Frequency - Transition1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f)-
Gain7.4dB
Power - Max270W
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)8A
Operating Temperature200°C (TJ)
Mounting TypeChassis Mount
Package / Case55KT
Supplier Device Package55KT

1214-110M - Tags

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