Image |
Part Number |
Description |
Package |
Standard Package |
 |
RN1902T5LFT Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
3000 |
 |
RN1902T5LFT Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
1 |
 |
RN4989(T5L,F,T) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
3000 |
 |
RN4989(T5L,F,T) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
1 |
 |
RN4986(T5L,F,T) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
3000 |
 |
RN4986(T5L,F,T) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
1 |
 |
RN1904,LF(CT Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
3000 |
 |
RN1904,LF(CT Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
1 |
 |
RN1964TE85LF Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
3000 |
 |
RN1964TE85LF Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
1 |
 |
RN1962TE85LF Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 500mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
3000 |
 |
RN1962TE85LF Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 500mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
1 |
 |
RN2906FE(TE85L,F) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6 |
SOT-563, SOT-666 |
4000 |
 |
RN2906FE(TE85L,F) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6 |
SOT-563, SOT-666 |
1 |
 |
RN2911FE(TE85L,F) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6 |
SOT-563, SOT-666 |
4000 |
 |
RN2911FE(TE85L,F) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6 |
SOT-563, SOT-666 |
1 |
 |
RN1909FE(TE85L,F) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
SOT-563, SOT-666 |
4000 |
 |
RN1909FE(TE85L,F) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
SOT-563, SOT-666 |
1 |
 |
RN1908FE(TE85L,F) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
SOT-563, SOT-666 |
4000 |
 |
RN1908FE(TE85L,F) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
SOT-563, SOT-666 |
1 |
 |
RN2901FE(TE85L,F) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6 |
SOT-563, SOT-666 |
4000 |
 |
RN2901FE(TE85L,F) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6 |
SOT-563, SOT-666 |
1 |
 |
RN1908(T5L,F,T) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
3000 |
 |
RN1908(T5L,F,T) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
1 |
 |
RN1909(T5L,F,T) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
3000 |
 |
RN1909(T5L,F,T) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
1 |
 |
RN1907,LF(CT Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
3000 |
 |
RN1907,LF(CT Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
1 |
 |
RN1905(T5L,F,T) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
3000 |
 |
RN1905(T5L,F,T) Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6 |
6-TSSOP, SC-88, SOT-363 |
1 |